Gallium Oxide Transistor Market Gallium Oxide Transistor Market – Global Industry Analysis, Size, Share, Growth, Trends and Forecast – 2027

The bandgap is the major factor which concludes the electrical conductivity of the underlying materials in the electronics and semiconductor industry. The materials with smaller bandgap are called as semiconductor materials and the large bandgap materials are generally insulators that do not conduct electricity well. There is another class present with ultra-wide bandgap in semiconductors. The material with ultra-wide bandgap is capable of operating at higher temperature and have capability of handling high power. Gallium Oxide (Ga2O3) is one of the material which offers the ultra-wide bandgap as well as high breakdown voltage.

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Breakdown voltage describes as the total amount of electricity needed to transform a material from one medium to another, in case of Ga2O3 that is from insulator to a conductor. The breakdown voltage is directly proportional to the power handling capacity therefore the high breakdown voltage results in high power handling capacity. Hence, the gallium oxide is consider as more promising material for the next generation power devices. The gallium oxide has bandgap of about 4.8 eV, which is better than that of gallium nitride (3.3 eV) and silicon (1.1 eV).

The difference in bandgap of materials gives gallium oxide the capacity to resist a larger electric field than silicon (Si) and gallium nitride (GaN) can without breaking down. Furthermore, gallium oxide handles the same amount of voltage over a shorter distance. Also this material offers semiconductor manufacturers a highly appropriate substrate for microelectronic devices. Hence gallium oxide is use as a base for MOSFET commonly called as metal-oxide-semiconductor field-effect transistors by the transistor manufacturers. The gallium oxide is valuable for making smaller and lightweight transistors with high power handling ability owing to its offerings. And to achieve these advanced transistors an improved gate dielectrics are needed, along with thermal management approaches that will more effectively extract heat from the devices.

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Silicon material has wide range of applications in the world of microelectronics and semiconductor technology and it can be further used in upcoming future. But in scalability for power applications, the silicon material still faces some limitations. These limitation of silicon material can pushes semiconductor technology to its full potential, requires smaller designs at higher energy density. This requirement can be full fill by the emergence of gallium oxide material.

The high power transistor are used in electric vehicles charging stations to control and function at higher power levels than silicon based devices. For such application the gallium oxide transistor is the best solution. This will expected to increase the demand of gallium oxide transistor during forecast period. Furthermore, the high bandgap of gallium oxide material enables operation of transistor at higher temperatures that will eliminate the need of additional cooling system which directly minimize the system size. This reduced size of system can increase the demand of gallium oxide transistors by the power system manufacturers.